Gate voltage and oxide thickness dependence of progressive wear-out of ultra-thin gate oxides

New insights in the relation between electron trap generation and the statistical properties of oxide breakdown

R. Degraeve, G. Groeseneken, R. Bellens et al. · IEEE Transactions on Electron Devices · 1998 · 644 citations

Engineering, Electrical Engineering, Materials Science +17

Percolation models for gate oxide breakdown

J. H. Stathis · Journal of Applied Physics · 1999 · 528 citations

Natural Sciences, Electrical Engineering, Materials Science +17

Impact of MOSFET gate oxide breakdown on digital circuit operation and reliability

B. Kaczer, R. Degraeve, Mahmoud Rasras et al. · IEEE Transactions on Electron Devices · 2002 · 259 citations

Engineering, Computer Engineering, Electrical Engineering +17

On the weibull shape factor of intrinsic breakdown of dielectric films and its accurate experimental determination-part I: theory, methodology, experimental techniques

Ernest Y. Wu, R.‐P. Vollertsen · IEEE Transactions on Electron Devices · 2002 · 164 citations

Natural Sciences, Electrical Engineering, Materials Science +17

The impact of gate-oxide breakdown on SRAM stability

R. Rodrı́guez, J. H. Stathis, B.P. Linder et al. · IEEE Electron Device Letters · 2002 · 128 citations

Engineering, Computer Engineering, Electrical Engineering +17