R.‐P. Vollertsen - Concepedia

Author

R.‐P. Vollertsen

Also Known As

R. Vollertsen, R. ‐P. Vollertsen, R.-P. VOLLERTSEN, R.-P. Vollertsen, R.P. Vollertsen, R.‐P. VOLLERTSEN, R.‐P. Vollertsen, Rolf-Peter Vollertsen, Rolf‐Peter Vollertsen

Publications

1.1K

Citations

H-Index

Concepts

All Affiliations

Infineon Technologies (Germany)IBM (United States)Infineon Technologies (United States)Siemens (Germany)Haematologic Technologies (United States)

About

R.‐P. Vollertsen is an author at Infineon Technologies (Germany) specializing in engineering, electrical engineering, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	16	28	858
2	Applied Physics	12	17	623
3	Education	4	4	78
4	Civil Engineering	2	2	215
5	Law	1	1	15

R.‐P. Vollertsen

Publications

858

Citations

H-Index

Page 1

	Year	Citations
On the weibull shape factor of intrinsic breakdown of dielectric films and its accurate experimental determination-part I: theory, methodology, experimental techniques Ernest Y. Wu, R.‐P. Vollertsen IEEE Transactions on Electron Devices DielectricsPolarity DependenceEngineeringMeasurementWeibull Distribution Parameters	2002	161
Experimental evidence of T/sub BD/ power-law for voltage dependence of oxide breakdown Ernest Y. Wu, A. Vayshenker, E. Nowak, IEEE Transactions on Electron Devices Electrical EngineeringPoisson Random StatisticsEngineeringVoltage DependenceVoltage Acceleration Factors	2002	145
Weibull breakdown characteristics and oxide thickness uniformity L.-K. Han, R.‐P. Vollertsen, E. Nowak, IEEE Transactions on Electron Devices Materials EngineeringReliabilityElectrical EngineeringReliability EngineeringEngineering	2000	60
Understanding soft and hard breakdown statistics, prevalence ratios and energy dissipation during breakdown runaway J. Suñé, Ernest Y. Wu, David Jiménez, EngineeringEnergy DissipationBd RunawayReliability EngineeringGate Oxide Breakdown	2002	54
Dependence of dielectric time to breakdown distributions on test structure area R.‐P. Vollertsen, Wilhelm Kleppmann EngineeringDielectric Reliability EngineeringMem TestingDielectric TimeReliability Engineering	2002	43
Comprehensive physics-based breakdown model for reliability assessment of oxides with thickness ranging from 1 nm up to 12 nm Ernest Y. Wu, J. Suñé, R.‐P. Vollertsen IEEE International Reliability Physics Symposium proceedings EngineeringReliability AssessmentAcceleration ModelDirect TunnelingDefect Generation Efficiency	2009	34
New global insight in ultrathin oxide reliability using accurate experimental methodology and comprehensive database Ernest Y. Wu, E. Nowak, A. Vayshenker, IEEE Transactions on Device and Materials Reliability EngineeringVoltage AccelerationAccurate Experimental MethodologyNew Global InsightReliability Engineering	2001	34
An introduction to fast wafer level reliability monitoring for integrated circuit mass production Andreas Martin, R.‐P. Vollertsen Microelectronics Reliability ReliabilityElectrical EngineeringReliability EngineeringEngineeringHardware Reliability	2004	25
A novel multi-point NBTI characterization methodology using Smart Intermediate Stress (SIS) Christian Schlünder, Marcel Hoffmann, R.‐P. Vollertsen, Numerical AnalysisPoint MeasurementEngineeringMeasurementAccuracy And Precision	2008	25
Burn-in R.‐P. Vollertsen, R. Hijab ReliabilityHardware SecurityElectrical EngineeringReliability EngineeringGeneral Introduction	1999	24

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