A. Vayshenker

Experimental evidence of T/sub BD/ power-law for voltage dependence of oxide breakdown

Ernest Y. Wu, A. Vayshenker, E. Nowak et al. · IEEE Transactions on Electron Devices · 2002 · 146 citations

Engineering, Electrical Engineering, Materials Science +17

Interplay of voltage and temperature acceleration of oxide breakdown for ultra-thin gate oxides

Ernest Y. Wu, J. Suñé, W. Lai et al. · Solid-State Electronics · 2002 · 124 citations

Engineering, Electrical Engineering, Materials Science +16

Voltage dependence of hard breakdown growth and the reliability implication in thin dielectrics

B.P. Linder, S. Lombardo, J. H. Stathis et al. · IEEE Electron Device Letters · 2002 · 117 citations

Engineering, Electrical Engineering, Materials Science +17

High Performance 45-nm SOI Technology with Enhanced Strain, Porous Low-k BEOL, and Immersion Lithography

P. Agnello, T. Ivers, C. Warm et al. · 2006 · 115 citations

Engineering, Computer Engineering, Electrical Engineering +17

CMOS scaling beyond the 100-nm node with silicon-dioxide-based gate dielectrics

Ernest Y. Wu, E. Nowak, A. Vayshenker et al. · IBM Journal of Research and Development · 2002 · 84 citations

Engineering, Electrical Engineering, Materials Science +17