Concepedia

Interplay of voltage and temperature acceleration of oxide breakdown for ultra-thin gate oxides

Ernest Y. Wu, J. Suñé, W. Lai, E. Nowak, J. A. McKenna, A. Vayshenker, D. Harmon

Solid-State Electronics · 2002 · 124 citations · 48 references

DOI

Concepts

References

48

Impact ionization, trap creation, degradation, and breakdown in silicon dioxide films on silicon

D. J. DiMaria, E. Cartier, D. Arnold · Journal of Applied Physics · 1993 · 716 citations

, , +17

Mechanism for stress-induced leakage currents in thin silicon dioxide films

D. J. DiMaria, E. Cartier · Journal of Applied Physics · 1995 · 547 citations

, , +16

Percolation models for gate oxide breakdown

J. H. Stathis · Journal of Applied Physics · 1999 · 528 citations

, , +17

Underlying physics of the thermochemical E model in describing low-field time-dependent dielectric breakdown in SiO2 thin films

J. W. McPherson, H. C. Mogul · Journal of Applied Physics · 1998 · 495 citations

, , +17

A consistent model for the thickness dependence of intrinsic breakdown in ultra-thin oxides

R. Degraeve, G. Groeseneken, R. Bellens et al. · 2002 · 336 citations

, , +17