Experimental evidence of T/sub BD/ power-law for voltage dependence of oxide breakdown

Ernest Y. Wu, A. Vayshenker, E. Nowak, +4

IEEE Transactions on Electron Devices

Electrical EngineeringPoisson Random StatisticsEngineeringVoltage DependenceVoltage Acceleration Factors +10

Interplay of voltage and temperature acceleration of oxide breakdown for ultra-thin gate oxides

Ernest Y. Wu, J. Suñé, W. Lai, +4

Solid-State Electronics

Electrical EngineeringEngineeringStress-induced Leakage CurrentBias Temperature InstabilityOxide Electronics +6

Reaction Mechanisms of Plasma‐ and Thermal‐Assisted Chemical Vapor Deposition of Tetraethylorthosilicate Oxide Films

S. Nguyen, D. Dobuzinsky, D. Harmon, +2

Journal of The Electrochemical Society

EngineeringCvd FilmsThin Film Process TechnologyChemistryReaction Mechanisms +15

CMOS scaling beyond the 100-nm node with silicon-dioxide-based gate dielectrics

Ernest Y. Wu, E. Nowak, A. Vayshenker, +2

IBM Journal of Research and Development

Cmos ScalingEngineeringIntegrated CircuitsSilicon On InsulatorSemiconductor Device +15

A Thin-Film SOI 180nm CMOS RF Switch Technology

A. Botula, Alvin Joseph, J. Slinkman, +13

Low-power ElectronicsElectrical EngineeringRf Switch ApplicationsGaas PhemtEngineering +10

Voltage-dependent voltage-acceleration of oxide breakdown for ultra-thin oxides

Ernest Y. Wu, J. Aitken, E. Nowak, +8

Electrical EngineeringEngineeringDefect Generation ProbabilityPhysicsFractional Energy +8

High performance 65 nm SOI technology with dual stress liner and low capacitance SRAM cell

E. Leobandung, H. Nayakama, D. Mocuta, +79

Electrical EngineeringEngineeringVlsi DesignAdvanced Packaging (Semiconductors)Nm Soi Technology +13

High performance 65 nm SOI technology with enhanced transistor strain and advanced-low-K BEOL

W.-H. Lee, Anya M. Waite, H. Nii, +53

EngineeringVlsi DesignIntegrated CircuitsSilicon On InsulatorHigh Performance 65 +17

Cu/low-k dielectric TDDB reliability issues for advanced CMOS technologies

F. Chen, D. Harmon, M. Shinosky, +1

Microelectronics Reliability

Electrical EngineeringEngineeringHardware ReliabilityAdvanced Cmos TechnologiesNanoelectronics +5

Interrelationship of voltage and temperature dependence of oxide breakdown for ultrathin oxides

Ernest Y. Wu, D. Harmon, Liang-Kai Han

IEEE Electron Device Letters

EngineeringNatural Normalization SchemeTemperature DependenceVoltage AccelerationNanoelectronics +15