2009 · 84 citations · 13 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesThin FilmsCmos Circuit DesignComplementary Metal-oxide-semiconductor TechnologyHigh-frequency Semiconductor DevicesIntegrated Circuit DesignMicrowave Integrated CircuitsRadio-frequency Integrated CircuitsCmos Fabrication ProcessesCmos Radio-frequency CircuitsHarmonic GenerationPower HandlingRf Cmos DesignRf SwitchesSwitch Fabrication ProcessesThin-film Semiconductors
This paper describes a 180 nm CMOS thin film SOI technology developed for RF switch applications. For the first time we show that the well-known harmonic generation issue in HRES SOI technologies can be suppressed with one additional mask. Power handling, linearity, and Ron*Coff product are competitive with GaAs pHEMT and silicon-on-sapphire technologies.
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Oxygen precipitation in silicon
A. Borghesi, B. Pivac, A. Sassella et al. · Journal of Applied Physics · 1995 · 488 citations
Natural Sciences, Materials Engineering, Materials Science +11
Oxygen precipitation in silicon
W. Patrick, E. E. Hearn, W. A. Westdorp et al. · Journal of Applied Physics · 1979 · 442 citations
Natural Sciences, Materials Engineering, Materials Science +11
The state-of-the-art of silicon-on-sapphire CMOS RF switches
Dylan Kelly, C. Brindle, C. Kemerling et al. · 2005 · 75 citations