Zhenyu He

A 0.18 μm BiCMOS technology featuring 120/100 GHz (f/sub T//f/sub max/) HBT and ASIC-compatible CMOS using copper interconnect

Alvin Joseph, D. Coolbaugh, M. Zierak et al. · 2002 · 129 citations

Engineering, Electrical Engineering, Microelectronics +16

A 90nm SiGe BiCMOS technology for mm-wave and high-performance analog applications

John J. Pekarik, J. Adkisson, Peter Gray et al. · 2014 · 100 citations

Engineering, Electrical Engineering, Microelectronics +16

A Thin-Film SOI 180nm CMOS RF Switch Technology

A. Botula, Alvin Joseph, J. Slinkman et al. · 2009 · 84 citations

Engineering, Electrical Engineering, Microelectronics +16

Line edge roughness and spacing effect on low-k TDDB characteristics

F. Chen, J. R. Lloyd, Kaushik Chanda et al. · 2008 · 46 citations

Engineering, Materials Engineering, Materials Science +16

Advanced passive devices for enhanced integrated RF circuit performance

D. Coolbaugh, E. Eshun, R. Groves et al. · 2003 · 39 citations

Engineering, Electrical Engineering, Microelectronics +16