2003 · 39 citations · 0 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesHigh-frequency Semiconductor DevicesIntegrated Circuit DesignIntegrated Circuit DevicesMicrowave Integrated CircuitsMicrowave Semiconductor DevicesRadio-frequency Integrated CircuitsCapacitanceInductorsIntegrated Passive ComponentsIntegrated Passive DevicesPhase NoisePower ConsumptionRadio-frequency DevicesRadio-frequency Integrated Circuit Design
State of the art passive devices have been developed for optimum RF circuit performance. These devices include a hyperabrupt junction varactor with tunability (Cmax/Cmin) of 3.3, an accumulation mode MOS varactor, high capacitance nitride metal-insulator-metal capacitors, a BEOL TaN resistor and very high Q inductors with a peak Q of 28 at 3.5 GHz. VCO simulations using several of these elements show a significant reduction in VCO gain variation, phase noise, and power consumption.