J. Johnson

Self-aligned SiGe NPN transistors with 285 GHz f/sub MAX/ and 207 GHz f/sub T/ in a manufacturable technology

B. Jagannathan, Mahmoud Khater, F. Pagette et al. · IEEE Electron Device Letters · 2002 · 261 citations

Ghz F/sub Max/, Engineering, Semiconductor Device +17

ENGINE COMBUSTION NETWORK (ECN): CHARACTERIZATION AND COMPARISON OF BOUNDARY CONDITIONS FOR DIFFERENT COMBUSTION VESSELS

Maarten Meijer, Bart Somers, J. Johnson et al. · Atomization and Sprays · 2012 · 146 citations · Full text

A 0.18 μm BiCMOS technology featuring 120/100 GHz (f/sub T//f/sub max/) HBT and ASIC-compatible CMOS using copper interconnect

Alvin Joseph, D. Coolbaugh, M. Zierak et al. · 2002 · 129 citations

Engineering, Vlsi Design, Ge Ramp +18

High performance 14nm SOI FinFET CMOS technology with 0.0174µm<sup>2</sup> embedded DRAM and 15 levels of Cu metallization

C-H. Lin, B. Greene, J. Cai et al. · 2014 · 128 citations

Spray–combustion interaction mechanism of multiple-injection under diesel engine conditions

Khanh Cung, Abdul Moiz, J. Johnson et al. · Proceedings of the Combustion Institute · 2014 · 97 citations · Full text

Engine Systems, Engineering, Diesel Engine Conditions +4