Concepedia

Radio-frequency Devices

Radio-Frequency Devices is a semiconductor-based electronic component designed to operate efficiently at radio frequencies, distinguished by its ability to process high-frequency signals in communication and radar systems using wide-bandgap materials that enable superior power handling, thermal stability, and switching performance compared to conventional semiconductors.

1.9K

Publications

77K

Citations

7.6K

Authors

1.3K

Institutions

Publications per year

2017–2026

382

Parents

Publications

1.9K

The History of Power Transmission by Radio Waves

W. C. Brown · IEEE Transactions on Microwave Theory and Techniques · 1984 · 1.6K citations

, , +17

A New High Efficiency Power Amplifier for Modulated Waves

W.H. Doherty · Proceedings of the IRE · 1936 · 1.1K citations

, , +16

Ultra-wideband radio technology: Potential and challenges ahead

D. Porcino, W. Hirt · IEEE Communications Magazine · 2003 · 976 citations

, , +15

Oscillations up to 712 GHz in InAs/AlSb resonant-tunneling diodes

E. R. Brown, J. R. Söderström, C. D. Parker et al. · Applied Physics Letters · 1991 · 796 citations

, , +16

Pentacene-based radio-frequency identification circuitry

P. F. Baude, D. A. Ender, M. A. Haase et al. · Applied Physics Letters · 2003 · 755 citations

, , +15

1–5 of 1.9K

Authors

7.6K

  1. HE
    H. Eisele

    University of Michigan, United States

    19 publications · 754 citations

    16

    h-index

  2. MR
    M.J.W. Rodwell

    University of California, Santa Barbara, United States

    12 publications · 585 citations

    12

    h-index

  3. MT
    M. Thumm

    Karlsruhe Institute of Technology, Germany

    14 publications · 456 citations

    12

    h-index

  4. GH
    G.I. Haddad

    University of Michigan, United States

    11 publications · 501 citations

    11

    h-index

  5. JF
    Jinjun Feng

    University of Electronic Science and Technology of China, China

    9 publications · 342 citations

    10

    h-index

1–5 of 7.6K

Institutions

1.3K

  1. University of Michigan

    Ann Arbor, United States

    21 h-index

    81 publications

    3.6K citations

  2. NTT (Japan)

    Tokyo, Japan

    19 h-index

    120 publications

    3.3K citations

  3. IBM (United States)

    Armonk, United States

    17 h-index

    91 publications

    4.6K citations

  4. Infineon Technologies (Germany)

    Munich, Germany

    17 h-index

    108 publications

    6.1K citations

  5. Jet Propulsion Laboratory

    Pasadena, United States

    17 h-index

    81 publications

    6.7K citations

  6. HRL Laboratories (United States)

    Malibu, United States

    17 h-index

    115 publications

    4.4K citations

  7. University of California, Santa Barbara

    Santa Barbara, United States

    16 h-index

    79 publications

    3.1K citations

  8. Massachusetts Institute of Technology

    Cambridge, United States

    16 h-index

    56 publications

    6.2K citations

1–8 of 1.3K

Venues

  1. 40

    h-index

  2. IEEE Transactions on Electron Devices

    80 publications · 3.5K citations

    34

    h-index

  3. IEEE Electron Device Letters

    67 publications · 3.1K citations

    32

    h-index

  4. IEEE Journal of Solid-State Circuits

    37 publications · 2.3K citations

    28

    h-index

  5. Applied Physics Letters

    48 publications · 3.4K citations

    26

    h-index

1–5