J. R. Söderström

Oscillations up to 712 GHz in InAs/AlSb resonant-tunneling diodes

E. R. Brown, J. R. Söderström, C. D. Parker et al. · Applied Physics Letters · 1991 · 793 citations

Wide-bandgap Semiconductor, Room Temperature, Electrical Engineering +13

New negative differential resistance device based on resonant interband tunneling

J. R. Söderström, D. H. Chow, T. C. McGill · Applied Physics Letters · 1989 · 258 citations

Wide-bandgap Semiconductor, Electrical Engineering, Semiconductor Device +11

Growth and characterization of InAs/Ga1−<i>x</i>In<i>x</i>Sb strained-layer superlattices

D. H. Chow, R. H. Miles, J. R. Söderström et al. · Applied Physics Letters · 1990 · 79 citations

Materials Science, Semiconductors, Wide-bandgap Semiconductor +13

Growth and characterization of high current density, high-speed InAs/AlSb resonant tunneling diodes

J. R. Söderström, E. R. Brown, C. D. Parker et al. · Applied Physics Letters · 1991 · 72 citations

Wide-bandgap Semiconductor, High-speed Inas/alsb Resonant, Electrical Engineering +14

Molecular beam epitaxy growth and characterization of InSb layers on GaAs substrates

J. R. Söderström, M. M. Cumming, Jiyong Yao et al. · Semiconductor Science and Technology · 1992 · 70 citations

Electrical Engineering, Epitaxial Growth, Engineering +11