J. R. Söderström

Oscillations up to 712 GHz in InAs/AlSb resonant-tunneling diodes

E. R. Brown, J. R. Söderström, C. D. Parker et al. · Applied Physics Letters · 1991 · 796 citations

Engineering, Electrical Engineering, Electronic Materials +16

New negative differential resistance device based on resonant interband tunneling

J. R. Söderström, D. H. Chow, T. C. McGill · Applied Physics Letters · 1989 · 258 citations

Engineering, Electrical Engineering, Physics +17

Growth and characterization of InAs/Ga1−<i>x</i>In<i>x</i>Sb strained-layer superlattices

D. H. Chow, R. H. Miles, J. R. Söderström et al. · Applied Physics Letters · 1990 · 79 citations

Natural Sciences, Materials Science, Physics +17

Growth and characterization of high current density, high-speed InAs/AlSb resonant tunneling diodes

J. R. Söderström, E. R. Brown, C. D. Parker et al. · Applied Physics Letters · 1991 · 73 citations

Engineering, Electrical Engineering, Materials Science +17

Molecular beam epitaxy growth and characterization of InSb layers on GaAs substrates

J. R. Söderström, M. M. Cumming, Thomas Andersson · Semiconductor Science and Technology · 1992 · 70 citations

Engineering, Materials Science, Physics +17