Rf Cmos Design
RF CMOS Design is a methodological framework within radio-frequency integrated circuit design that specifically employs complementary metal-oxide-semiconductor technology to implement high-frequency analog and mixed-signal functions, distinguished by its integration of RF circuitry with digital logic on a single silicon substrate for cost-effective, scalable, and power-efficient wireless communication systems.
4.6K
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1.3K
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Publications per year
2017–2026
744
Variants
Radio Frequency Cmos Design
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University of California, Los Angeles
Los Angeles, United States
50 h-index
389 publications
25.5K citations

National Taiwan University
Taipei, Taiwan
48 h-index
608 publications
25.2K citations
University of California, Berkeley
Berkeley, United States
47 h-index
346 publications
26.3K citations
Texas Instruments (United States)
Dallas, United States
44 h-index
505 publications
35.2K citations
University of California San Diego
San Diego, United States
40 h-index
220 publications
10.6K citations
Korea Advanced Institute of Science and Technology
Daejeon, South Korea
36 h-index
324 publications
12.4K citations
Intel (United States)
Santa Clara, United States
35 h-index
573 publications
22.7K citations
STMicroelectronics (France)
Montrouge, France
34 h-index
365 publications
18.1K citations
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615 publications · 50.5K citations
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