Dimitris P. Ioannou

22nm High-performance SOI technology featuring dual-embedded stressors, Epi-Plate High-K deep-trench embedded DRAM and self-aligned Via 15LM BEOL

P. Chang, C. Ortolland, David Fried et al. · 2012 · 89 citations

Engineering, Computer Engineering, Electrical Engineering +17

A Thin-Film SOI 180nm CMOS RF Switch Technology

A. Botula, Alvin Joseph, J. Slinkman et al. · 2009 · 84 citations

Engineering, Electrical Engineering, Microelectronics +16

High performance 32nm SOI CMOS with high-k/metal gate and 0.149µm 2 SRAM and ultra low-k back end with eleven levels of copper

B. Greene, Qingqing Liang, K. Amarnath et al. · Symposium on VLSI Technology · 2006 · 40 citations

Engineering, Computer Engineering, Electrical Engineering +15

Effect of plasma N2 and thermal NH3 nitridation in HfO2 for ultrathin equivalent oxide thickness

Min Dai, Yanfeng Wang, J. Shepard et al. · Journal of Applied Physics · 2013 · 29 citations

Engineering, Materials Engineering, Materials Science +17

Positive Bias Temperature Instability Effects in nMOSFETs With $\hbox{HfO}_{2}/\hbox{TiN}$ Gate Stacks

Dimitris P. Ioannou, S. Mittl, Giuseppe La Rosa · IEEE Transactions on Device and Materials Reliability · 2009 · 28 citations

Engineering, Electrical Engineering, Materials Science +17