J. Shepard - Concepedia

Author

J. Shepard

IBM (United States)ORCID

Also Known As

J Shepard, J. F. SHEPARD, J. F. Shepard, J. F. Shepard Jr, J. Shepard, J.F. Shepard, Joseph F. Shepard, Joseph Shepard

Publications

1.8K

Citations

H-Index

Concepts

All Affiliations

IBM (United States)Pennsylvania State University GlobalFoundries (United States)IBM Research - Thomas J. Watson Research Center Advanced Micro Devices (United States)

About

J. Shepard is an author at IBM (United States) specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	16	21	1.6K
2	Applied Physics	14	18	1.5K
3	Computer Engineering	5	5	237
4	Natural Sciences	1	1	386
5	Biomedical Engineering	1	1	57

J. Shepard

Publications

1.7K

Citations

H-Index

Page 1

	Year	Citations
A Kinetic Model for Step Coverage by Atomic Layer Deposition in Narrow Holes or Trenches Roy G. Gordon, Dennis M. Hausmann, E. Kim, Chemical Vapor Deposition EngineeringMaterial SimulationStep CoverageWater VaporChemical Deposition	2003	386
Design and characteristics of the lightly doped drain-source (LDD) insulated gate field-effect transistor S. Ogura, P.J. Tsang, William W. Walker, IEEE Transactions on Electron Devices Device ModelingElectrical EngineeringEngineeringLdd StructurePhysics	1980	319
The wafer flexure technique for the determination of the transverse piezoelectric coefficient (d31) of PZT thin films J. Shepard, Paul Moses, Susan Trolier‐McKinstry Sensors and Actuators A Physical Materials EngineeringMaterials SciencePzt Thin FilmsEngineeringSoft Mode	1998	191
Characterization and aging response of the d31 piezoelectric coefficient of lead zirconate titanate thin films J. Shepard, Fan Chu, Isaku Kanno, Journal of Applied Physics EngineeringRadio FrequencyThin Film Process TechnologySurface TechnologyPiezoelectric Material	1999	125
Fabrication of high-performance LDDFET's with Oxide sidewall-spacer technology P.J. Tsang, S. Ogura, William W. Walker, IEEE Transactions on Electron Devices Materials ScienceSemiconductor TechnologyElectrical EngineeringEngineeringAdvanced Packaging (Semiconductors)	1982	115
A manufacturable dual channel (Si and SiGe) high-k metal gate CMOS technology with multiple oxides for high performance and low power applications Siddarth Krishnan, U. Kwon, N. Moumen, Sige ChannelsLow Power ApplicationsEngineeringVlsi DesignIntegrated Circuits	2011	81
A 7nm CMOS technology platform for mobile and high performance compute application B. Jagannathan, Akihisa Ogino, D. Jaeger, EngineeringVlsi DesignComputer ArchitectureIntegrated CircuitsHardware Systems	2017	58
A half micron MOSFET using double implanted LDD S. Ogura, C.F. Codella, N. Rovedo, Low-power ElectronicsN RegionsElectrical EngineeringEngineeringMicrofabrication	1982	57
Design and Characteristics of the Lightly Doped Drain-Source (LDD) Insulated Gate Field-Effect Transistor S. Ogura, P.J. Tsang, William W. Walker, IEEE Journal of Solid-State Circuits EngineeringVlsi DesignBoron ChannelPower ElectronicsSemiconductor Device	1980	53
Piezoelectricity in ferroelectric thin films: Domain and stress issues Susan Trolier‐McKinstry, J. Shepard, J. Lacey, Ferroelectrics Materials ScienceFerroelasticsEngineeringMechanical PropertiesPiezoelectric Nanogenerators	1998	40

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