IEEE Transactions on Electron Devices · 1982 · 115 citations · 9 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesComplementary Metal-oxide-semiconductor TechnologyDevice CharacterizationIntegrated Circuit DesignMetal-oxide-semiconductor Field-effect TransistorsSemiconductor Device MaterialsCmos Fabrication ProcessesFabrication
A fabrication process for the Lightly Doped Drain/Source Field-Effect Transistor, LDDFET, that utilizes RIE produced SiO <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> sidewall spacers is described. The process is compatible with most conventional polysilicon-gated FET processes and needs no additional photomasking steps. Excellent control and reproducibility of the n <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-</sup> region of the LDD device are obtained. Measurements from dynamic clock generators have shown that LDDFET's have as much as 1.9X performance advantage over conventional devices.
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A new method to determine MOSFET channel length
Jenn-Gang Chern, Po‐Han Chang, R.F. Motta et al. · IEEE Electron Device Letters · 1980 · 312 citations