P.J. Tsang

Design and characteristics of the lightly doped drain-source (LDD) insulated gate field-effect transistor

S. Ogura, P.J. Tsang, William W. Walker et al. · IEEE Transactions on Electron Devices · 1980 · 320 citations

Engineering, Electrical Engineering, Electronic Materials +16

Fabrication of high-performance LDDFET's with Oxide sidewall-spacer technology

P.J. Tsang, S. Ogura, William W. Walker et al. · IEEE Transactions on Electron Devices · 1982 · 115 citations

Engineering, Electrical Engineering, Materials Science +10

Design and Characteristics of the Lightly Doped Drain-Source (LDD) Insulated Gate Field-Effect Transistor

S. Ogura, P.J. Tsang, William W. Walker et al. · IEEE Journal of Solid-State Circuits · 1980 · 53 citations

Engineering, Electrical Engineering, Electronic Materials +16

Elimination of hot electron gate current by the lightly doped drain-source structure

S. Ogura, P.J. Tsang, William W. Walker et al. · 1981 · 29 citations

Engineering, Electrical Engineering, Electronic Materials +15