Journal of Applied Physics · 1999 · 125 citations · 14 references
Natural SciencesMaterials EngineeringMaterials ScienceCeramic MaterialsMaterials CharacterizationThin FilmsDielectric MaterialsFerroelectric CeramicsFerroelectric MaterialsPiezoelectric CeramicsPiezoelectric MaterialsThin-film MaterialsAging BehaviorAging Of Thin FilmsLead Zirconate TitanatePiezoelectric CoefficientsPiezoelectric EffectSol-gel Thin FilmsThin Film AgingThin-film Piezoelectrics
The wafer flexure technique was used to characterize the d31 coefficient of a number of sol–gel and radio frequency (rf) sputtered lead zirconate titanate (PZT) thin films with thicknesses between 0.6 and 3 μm. Typical d31 values for well-poled 52/48 sol–gel films were found to be between −50 and −60 pC/N. The rf sputtered films possessed large as-deposited polarizations which produced d31 coefficients on the order of −70 pC/N in some unpoled films. The subsequent poling of the material, in a direction parallel to the preferred direction increased the d31 coefficient to values of about −85 pC/N. The aging behavior of the d31 coefficient was also investigated. For sol–gel films the aging rate was found to be independent of poling direction and to range from 4% per decade for a 2.5 μm film to 8% per decade for a 0.6 μm film. In contrast, the aging rate of sputtered films was strongly dependent on poling direction, with maximum and minimum rates of 26% and 2% per decade recorded. These aging rates are very high in light of the limited twin wall motion in PZT films, and are believed to result from the depolarizing effects of internal electric fields in the rf sputtered films and interfacial defects in the sol–gel films.
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