W. Lai

Experimental evidence of T/sub BD/ power-law for voltage dependence of oxide breakdown

Ernest Y. Wu, A. Vayshenker, E. Nowak et al. · IEEE Transactions on Electron Devices · 2002 · 145 citations

Electrical Engineering, Poisson Random Statistics, Engineering +12

Interplay of voltage and temperature acceleration of oxide breakdown for ultra-thin gate oxides

Ernest Y. Wu, J. Suñé, W. Lai et al. · Solid-State Electronics · 2002 · 122 citations

Electrical Engineering, Engineering, Stress-induced Leakage Current +8

CMOS scaling beyond the 100-nm node with silicon-dioxide-based gate dielectrics

Ernest Y. Wu, E. Nowak, A. Vayshenker et al. · IBM Journal of Research and Development · 2002 · 84 citations

Cmos Scaling, Engineering, Integrated Circuits +17

A high performance 90nm SOI technology with 0.992 μm/sup 2/ 6T-SRAM cell

Mukesh Khare, S.H. Ku, R. A. Donaton et al. · 2003 · 43 citations

Low-power Electronics, Materials Science, Electrical Engineering +14

Successive Oxide Breakdown Statistics: Correlation Effects, Reliability Methodologies, and Their Limits

J. Suñé, Ernest Y. Wu, W. Lai · IEEE Transactions on Electron Devices · 2004 · 42 citations

Engineering, Chip Reliability Assessment, Reliability Engineering +16