W. Lai - Concepedia

Author

W. Lai

IBM (United States)

Also Known As

W Lai, W. L. Lai, W. Lai, W.L. Lai, Wenlian Lai, Wing L. Lai, Wing Lai

Publications

797

Citations

H-Index

Concepts

All Affiliations

IBM (United States)Universitat Autònoma de Barcelona

About

W. Lai is an author at IBM (United States) specializing in electrical engineering, engineering, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	16	18	741
2	Electrical Engineering	16	18	741
3	Applied Physics	15	17	699
4	Computer Engineering	4	4	124
5	Materials Science	4	4	120

W. Lai

Publications

741

Citations

H-Index

Page 1

	Year	Citations
Experimental evidence of T/sub BD/ power-law for voltage dependence of oxide breakdown Ernest Y. Wu, A. Vayshenker, E. Nowak, IEEE Transactions on Electron Devices Electrical EngineeringPoisson Random StatisticsEngineeringVoltage DependenceVoltage Acceleration Factors	2002	145
Interplay of voltage and temperature acceleration of oxide breakdown for ultra-thin gate oxides Ernest Y. Wu, J. Suñé, W. Lai, Solid-State Electronics Electrical EngineeringEngineeringStress-induced Leakage CurrentBias Temperature InstabilityOxide Electronics	2002	122
CMOS scaling beyond the 100-nm node with silicon-dioxide-based gate dielectrics Ernest Y. Wu, E. Nowak, A. Vayshenker, IBM Journal of Research and Development Cmos ScalingEngineeringIntegrated CircuitsSilicon On InsulatorSemiconductor Device	2002	84
A high performance 90nm SOI technology with 0.992 μm/sup 2/ 6T-SRAM cell Mukesh Khare, S.H. Ku, R. A. Donaton, Low-power ElectronicsMaterials ScienceElectrical EngineeringHigh Performance 90NmSoi Technology	2003	43
Successive Oxide Breakdown Statistics: Correlation Effects, Reliability Methodologies, and Their Limits J. Suñé, Ernest Y. Wu, W. Lai IEEE Transactions on Electron Devices EngineeringChip Reliability AssessmentReliability EngineeringSuccessive EventsReliability	2004	42
Statistics of competing post-breakdown failure modes in ultrathin MOS devices J. Suñé, Ernest Y. Wu, W. Lai IEEE Transactions on Electron Devices ReliabilityElectrical EngineeringReliability EngineeringEngineeringHardware Reliability	2006	41
Off-state mode TDDB reliability for ultra-thin gate oxides: New methodology and the impact of oxide thickness scaling Ernest Y. Wu, E. Nowak, W. Lai Electrical EngineeringEngineeringOxide Thickness ScalingHardware ReliabilityNanoelectronics	2004	33
The effect of change of voltage acceleration on temperature activation of oxide breakdown for ultrathin oxides Ernest Y. Wu, James McKenna, W. Lai, IEEE Electron Device Letters Materials ScienceElectrical EngineeringEngineeringTemperature ActivationPhysics	2001	30
Critical reliability challenges in scaling SiO2-based dielectric to its limit Ernest Y. Wu, J. Suñé, W. Lai, Microelectronics Reliability Materials ScienceElectrical EngineeringEngineeringHardware ReliabilityDevice Reliability	2003	29
Polarity-dependent oxide breakdown of NFET devices for ultra-thin gate oxide Ernest Y. Wu, W. Lai, Mukesh Khare, Electrical EngineeringEngineeringPhysicsNanoelectronicsBias Temperature Instability	2003	27

Page 1