Concepedia

Oxide Breakdown

Oxide Breakdown is a thin film oxidation phenomenon characterized by the catastrophic failure of a metal oxide layer due to excessive electric field stress or prolonged environmental exposure, resulting in loss of protective functionality and increased oxidation kinetics.

682

Publications

31.2K

Citations

1.9K

Authors

509

Institutions

Publications per year

2017–2026

47

Parents

Publications

682

Origin of voltage decay in high-capacity layered oxide electrodes

Artem M. Abakumov, Dominique Foix, Gwenaëlle Rousse et al. · Nature Materials · 2014 · 913 citations · Full text

, , +14

The mechanism of electroforming of metal oxide memristive switches

J. Joshua Yang, Feng Miao, Matthew D. Pickett et al. · Nanotechnology · 2009 · 851 citations

, , +17

New insights in the relation between electron trap generation and the statistical properties of oxide breakdown

R. Degraeve, G. Groeseneken, R. Bellens et al. · IEEE Transactions on Electron Devices · 1998 · 644 citations

, , +17

Percolation models for gate oxide breakdown

J. H. Stathis · Journal of Applied Physics · 1999 · 528 citations

, , +17

Electrical breakdown in thin gate and tunneling oxides

Ih-Chin Chen, S. Holland, Chenming Hu · IEEE Transactions on Electron Devices · 1985 · 484 citations

, , +17

1–5 of 682

Authors

1.9K

  1. EY
    Ernest Y. Wu

    IBM (United States), United States

    28 publications · 1.5K citations

    23

    h-index

  2. JS
    J. Suñé

    Universitat Autònoma de Barcelona, Spain

    32 publications · 1.6K citations

    21

    h-index

  3. GG
    G. Groeseneken

    IMEC, Belgium

    33 publications · 2.2K citations

    21

    h-index

  4. RD
    R. Degraeve

    IMEC, Belgium

    26 publications · 2.1K citations

    20

    h-index

  5. CH
    Chenming Hu

    University of California, Berkeley, United States

    18 publications · 1.8K citations

    18

    h-index

1–5 of 1.9K

Institutions

509

  1. IBM (United States)

    Armonk, United States

    29 h-index

    141 publications

    7.6K citations

  2. Universitat Autònoma de Barcelona

    Cerdanyola del Vallès, Spain

    28 h-index

    106 publications

    4.4K citations

  3. University of California, Berkeley

    Berkeley, United States

    27 h-index

    98 publications

    8.1K citations

  4. IMEC

    Leuven, Belgium

    25 h-index

    166 publications

    12.5K citations

  5. IBM Research - Thomas J. Watson Research Center

    Yorktown Heights, United States

    17 h-index

    51 publications

    4K citations

  6. Centre National de la Recherche Scientifique

    Paris, France

    14 h-index

    56 publications

    8.5K citations

  7. Texas Instruments (United States)

    Dallas, United States

    14 h-index

    28 publications

    1.4K citations

  8. Clemson University

    Clemson, United States

    13 h-index

    48 publications

    2.2K citations

1–8 of 509

Venues

  1. IEEE Transactions on Electron Devices

    66 publications · 4.9K citations

    37

    h-index

  2. IEEE Electron Device Letters

    50 publications · 2.6K citations

    27

    h-index

  3. Journal of Applied Physics

    39 publications · 2.6K citations

    25

    h-index

  4. Journal of The Electrochemical Society

    JES · 32 publications · 1.6K citations

    24

    h-index

  5. Applied Physics Letters

    41 publications · 1.6K citations

    23

    h-index

1–5