L.-K. Han

Voltage-dependent voltage-acceleration of oxide breakdown for ultra-thin oxides

Ernest Y. Wu, J. Aitken, E. Nowak et al. · 2002 · 82 citations

Engineering, Electrical Engineering, Materials Science +17

Weibull breakdown characteristics and oxide thickness uniformity

L.-K. Han, R.‐P. Vollertsen, E. Nowak et al. · IEEE Transactions on Electron Devices · 2000 · 60 citations

Engineering, Electrical Engineering, Materials Science +17

A 90-nm CMOS device technology with high-speed, general-purpose, and low-leakage transistors for system on chip applications

Chung-Cheng Wu, Yuet‐Kin Leung, C. S. Chang et al. · 2003 · 46 citations

Engineering, Computer Engineering, Electrical Engineering +17

Polarity-dependent oxide breakdown of NFET devices for ultra-thin gate oxide

Ernest Y. Wu, W. Lai, Mukesh Khare et al. · 2003 · 27 citations

Engineering, Electrical Engineering, Materials Science +17

A modular 0.13 μm bulk CMOS technology for high performance and low power applications

L.-K. Han, S. Biesemans, J. Heidenreich et al. · 2002 · 27 citations

Engineering, Computer Engineering, Electrical Engineering +17