2002 · 82 citations · 5 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsMicroelectronicsSemiconductor DevicesCurrent-voltage CharacteristicsDevice ReliabilityDevice ScalingOhm's LawOxide SemiconductorsVoltage ScalingBreakdown CharacteristicsBreakdown MechanismsBreakdown VoltageOxide BreakdownThin-film OxidesThreshold VoltageTime-dependent Dielectric BreakdownVoltage-dependent Energetics
We report the voltage-dependence of voltage acceleration for ultra-thin oxides from 2.2 V to 5 V over a range of T/sub ox/ values from 1.7 nm to 5.0 nm. This unique behavior manifest itself as a power-law voltage-dependence for time-to-breakdown (T/sub BD/) over a variety of experimental observations. Using the concept of energy-to-breakdown, we explore the possible scenarios such as fractional energy or defect generation probability as a function of voltage to account for the increase in voltage acceleration with decreasing voltages.
5
On the breakdown statistics of very thin SiO2 films
J. Suñé, I. Placencia, N. Barniol et al. · Thin Solid Films · 1990 · 256 citations
Natural Sciences, Materials Engineering, Materials Science +10
Gate oxide reliability projection to the sub-2 nm regime
B. E. Weir, Md Ashraful Alam, J. Bude et al. · Semiconductor Science and Technology · 2000 · 80 citations
Degradation and Breakdown of Gate Oxides in VLSI Devices
J. Suñé, I. Placencia, N. Barniol et al. · physica status solidi (a) · 1989 · 47 citations