Concepedia

M. Röhner

MR

Statistics

Publications

8

Citations

170

H-Index

8

Active since

1999

Affiliations

Infineon Technologies (Germany)(Current)

M. Röhner is an author at Infineon Technologies (Germany) specializing in microelectronics, engineering, and electrical engineering.

Publications per year

1999–2007

8

Publications

8

Impact of failure criteria on the reliability prediction of CMOS devices with ultrathin gate oxides based on voltage ramp stress

A. Kerber, T. Pompl, M. Röhner et al. · IEEE Electron Device Letters · 2006 · 30 citations

Engineering, Electrical Engineering, Materials Science +17

Voltage Acceleration of TBD and Its Correlation to Post Breakdown Conductivity of N- and P-Channel MOSFETs

M. Röhner, A. Kerber, M. Kerber · 2006 · 28 citations

Engineering, Electrical Engineering, Electronic Materials +16

Trapping mechanisms in negative bias temperature stressed p-MOSFETs

Christian Schlünder, Ralf Brederlow, P. Wieczorek et al. · Microelectronics Reliability · 1999 · 28 citations

Engineering, Computer Engineering, Electrical Engineering +12

Lifetime Prediction for CMOS Devices with Ultra Thin Gate Oxides Based on Progressive Breakdown

A. Kerber, M. Röhner, T. Pompl et al. · 2007 · 24 citations

Engineering, Computer Engineering, Electrical Engineering +17

Voltage acceleration of time-dependent breakdown of ultra-thin gate dielectrics

T. Pompl, M. Röhner · Microelectronics Reliability · 2005 · 21 citations

Engineering, Electrical Engineering, Materials Science +16

1–5 of 8