Voltage acceleration of time-dependent breakdown of ultra-thin gate dielectrics

New insights in the relation between electron trap generation and the statistical properties of oxide breakdown

R. Degraeve, G. Groeseneken, R. Bellens et al. · IEEE Transactions on Electron Devices · 1998 · 644 citations

Engineering, Electrical Engineering, Materials Science +17

Percolation models for gate oxide breakdown

J. H. Stathis · Journal of Applied Physics · 1999 · 528 citations

Natural Sciences, Electrical Engineering, Materials Science +17

Electrical breakdown in thin gate and tunneling oxides

Ih-Chin Chen, S. Holland, Chenming Hu · IEEE Transactions on Electron Devices · 1985 · 484 citations

Engineering, Electrical Engineering, Physics +17

Acceleration Factors for Thin Gate Oxide Stressing

J. W. McPherson, David Baglee · Reliability physics · 1985 · 229 citations

Engineering, Electrical Engineering, Materials Science +14

Complementary model for intrinsic time-dependent dielectric breakdown in SiO2 dielectrics

J. W. McPherson, R. Khamankar, A. Shanware · Journal of Applied Physics · 2000 · 188 citations

Natural Sciences, Materials Science, Physics +17