J. W. McPherson

Underlying physics of the thermochemical E model in describing low-field time-dependent dielectric breakdown in SiO2 thin films

J. W. McPherson, H. C. Mogul · Journal of Applied Physics · 1998 · 491 citations

Local Electric Field, Engineering, Thermochemical E Model +17

Thermochemical description of dielectric breakdown in high dielectric constant materials

J. W. McPherson, Jin-Pyo Kim, A. Shanware et al. · Applied Physics Letters · 2003 · 386 citations

Dielectrics, Engineering, Dielectric Breakdown Strength +20

Trends in the ultimate breakdown strength of high dielectric-constant materials

J. W. McPherson, Jin‐Young Kim, A. Shanware et al. · IEEE Transactions on Electron Devices · 2003 · 365 citations

Materials Science, Materials Engineering, Electrical Engineering +12

Time dependent dielectric breakdown physics – Models revisited

J. W. McPherson · Microelectronics Reliability · 2012 · 238 citations

Electrical Engineering, Dielectrics, Engineering +4

Acceleration Factors for Thin Gate Oxide Stressing

J. W. McPherson, David Baglee · Reliability physics · 1985 · 229 citations

Apparent Activation Energy, Engineering, Silicon On Insulator +16