Simulation modelling of III-nitride/β-Ga2O3 HEMT for emerging high-power nanoelectronics applications

Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

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Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors

J. P. Ibbetson, P. Fini, K. D. Ness et al. · Applied Physics Letters · 2000 · 1.1K citations

Engineering, Electrical Engineering, Materials Science +17

The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs

B.M. Green, K. Chu, Eduardo M. Chumbes et al. · IEEE Electron Device Letters · 2000 · 723 citations

Engineering, Electrical Engineering, Materials Science +17

Scaling of GaN HEMTs and Schottky Diodes for Submillimeter-Wave MMIC Applications

K. Shinohara, D. Regan, Yan Tang et al. · IEEE Transactions on Electron Devices · 2013 · 494 citations

Engineering, Electrical Engineering, Materials Science +17

AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates

M. Asif Khan, X. Hu, Ahmad Tarakji et al. · Applied Physics Letters · 2000 · 355 citations

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