Concepedia

Heterostructure Device Modeling

Heterostructure Device Modeling is a computational framework within device simulation that specifically characterizes the electronic and optoelectronic behavior of semiconductor devices composed of multiple layers of dissimilar materials by accounting for quantum confinement effects, interfacial band alignments, and carrier transport across heterojunctions.

351

Publications

19.5K

Citations

1.1K

Authors

401

Institutions

Publications per year

2017–2026

68

Parents

Publications

351

GaAs, AlAs, and Al<i>x</i>Ga1−<i>x</i>As: Material parameters for use in research and device applications

Sadao Adachi · Journal of Applied Physics · 1985 · 3.3K citations

, , +17

Evidence for nonlinear macroscopic polarization in III–V nitride alloy heterostructures

Vincenzo Fiorentini, Fabio Bernardini, O. Ambacher · Applied Physics Letters · 2002 · 840 citations

, , +17

nextnano: General Purpose 3-D Simulations

Stefan Birner, T. Zibold, Till F. M. Andlauer et al. · IEEE Transactions on Electron Devices · 2007 · 647 citations

, , +17

Germanium-Based Technologies: From Materials to Devices

Materials Today · 2007 · 532 citations · Full text

, , +17

Interface engineering of quantum Hall effects in digital transition metal oxide heterostructures

Di Xiao, Wenguang Zhu, Ying Ran et al. · Nature Communications · 2011 · 480 citations · Full text

, , +13

1–5 of 351

Authors

1.1K

  1. MS
    M. S. Shur

    Rensselaer Polytechnic Institute, United States

    7 publications · 304 citations

    7

    h-index

  2. MT
    M. Tomizawa

    National Hospital Organization, Japan

    5 publications · 265 citations

    5

    h-index

  3. AW
    A. Wacker

    Lund University, Sweden

    5 publications · 291 citations

    5

    h-index

  4. TA
    Tor A. Fjeldly

    Norwegian University of Science and Technology, Norway

    5 publications · 227 citations

    5

    h-index

  5. KH
    K. Hess

    University of Illinois Urbana-Champaign, United States

    5 publications · 195 citations

    5

    h-index

1–5 of 1.1K

Institutions

401

  1. University of Illinois Urbana-Champaign

    Urbana, United States

    11 h-index

    34 publications

    1.5K citations

  2. Centre National de la Recherche Scientifique

    Paris, France

    11 h-index

    40 publications

    1.1K citations

  3. Purdue University West Lafayette

    West Lafayette, United States

    7 h-index

    15 publications

    1.3K citations

  4. Massachusetts Institute of Technology

    Cambridge, United States

    6 h-index

    20 publications

    2.3K citations

  5. NTT (Japan)

    Tokyo, Japan

    6 h-index

    17 publications

    4.2K citations

  6. The University of Tokyo

    Tokyo, Japan

    6 h-index

    13 publications

    1K citations

  7. University of Minnesota

    Minneapolis, United States

    6 h-index

    10 publications

    464 citations

  8. United States Naval Research Laboratory

    Washington, United States

    5 h-index

    13 publications

    372 citations

1–8 of 401

Venues

  1. IEEE Transactions on Electron Devices

    58 publications · 2.7K citations

    27

    h-index

  2. Journal of Applied Physics

    25 publications · 4.3K citations

    18

    h-index

  3. IEEE Electron Device Letters

    16 publications · 1.2K citations

    15

    h-index

  4. Solid-State Electronics

    22 publications · 881 citations

    15

    h-index

  5. Physical review. B, Condensed matter

    PRB · 15 publications · 1.2K citations

    14

    h-index

1–5