Tor A. Fjeldly

Effect of Free Carriers on Zone-Center Vibrational Modes in Heavily Doped<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>p</mml:mi></mml:math>-type Si. II. Optical Modes

F. Cerdeira, Tor A. Fjeldly, M. Cardona · Physical review. B, Solid state · 1973 · 458 citations

Optical Materials, Engineering, Optical Transmission System +18

A Physics-Based Analytical Model for 2DEG Charge Density in AlGaN/GaN HEMT Devices

Sourabh Khandelwal, Nitin Goyal, Tor A. Fjeldly · IEEE Transactions on Electron Devices · 2011 · 215 citations

Device Modeling, Wide-bandgap Semiconductor, Electrical Engineering +14

Transmission and reflection times for scattering of wave packets off tunneling barriers

E. H. Hauge, J. P. Falck, Tor A. Fjeldly · Physical review. B, Condensed matter · 1987 · 211 citations

Dwell Time, Engineering, Physics +10

Conducting laboratory experiments over the Internet

Hong Shen, Zheng Xu, B. Dalager et al. · IEEE Transactions on Education · 1999 · 174 citations

Laboratory Experiments, Engineering, Online Experiment +18

Analytical Modeling of Surface-Potential and Intrinsic Charges in AlGaN/GaN HEMT Devices

Sourabh Khandelwal, Yogesh Singh Chauhan, Tor A. Fjeldly · IEEE Transactions on Electron Devices · 2012 · 167 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +14