Tor A. Fjeldly - Concepedia

Author

Tor A. Fjeldly

Norwegian University of Science and Technology

Also Known As

Fjeldly, T.A., Kyungho Lee, T A Fjeldly, T. A. FJELDLY, T. A. Fjeldly, T. FJELDLY, T. Fjeldly, T.A. FJELDLY, T.A. Fjeldly, TOR A. FJELDLY

219

Publications

5.1K

Citations

H-Index

108

Concepts

All Affiliations

Norwegian University of Science and Technology University Graduate Center Rensselaer Polytechnic Institute Max Planck Institute for Solid State Research University of Virginia

About

Tor A. Fjeldly is an author at Norwegian University of Science and Technology specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	30	79	4.1K
2	Education	6	6	259
3	Natural Sciences	4	4	178
4	Business	1	1	10
5	Medicine	1	1	45

Tor A. Fjeldly

Publications

4.1K

Citations

H-Index

Page 1

	Year	Citations
Effect of Free Carriers on Zone-Center Vibrational Modes in Heavily Doped<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>p</mml:mi></mml:math>-type Si. II. Optical Modes F. Cerdeira, Tor A. Fjeldly, M. Cardona Physical review. B, Solid state Optical MaterialsEngineeringOptical Transmission SystemSurface-enhanced Raman ScatteringSilicon On Insulator	1973	458
A Physics-Based Analytical Model for 2DEG Charge Density in AlGaN/GaN HEMT Devices Sourabh Khandelwal, Nitin Goyal, Tor A. Fjeldly IEEE Transactions on Electron Devices Device ModelingWide-bandgap SemiconductorElectrical EngineeringEngineeringPhysics	2011	215
Transmission and reflection times for scattering of wave packets off tunneling barriers E. H. Hauge, J. P. Falck, Tor A. Fjeldly Physical review. B, Condensed matter Dwell TimeEngineeringPhysicsNarrow ResonancesWave Propagation	1987	211
Conducting laboratory experiments over the Internet Hong Shen, Zheng Xu, B. Dalager, IEEE Transactions on Education Laboratory ExperimentsEngineeringOnline ExperimentMeasurementEducation	1999	174
Analytical Modeling of Surface-Potential and Intrinsic Charges in AlGaN/GaN HEMT Devices Sourabh Khandelwal, Yogesh Singh Chauhan, Tor A. Fjeldly IEEE Transactions on Electron Devices SemiconductorsWide-bandgap SemiconductorElectrical EngineeringSemiconductor TechnologyEngineering	2012	167
Threshold voltage modeling and the subthreshold regime of operation of short-channel MOSFETs Tor A. Fjeldly, M. S. Shur IEEE Transactions on Electron Devices Device ModelingLow-power ElectronicsElectrical EngineeringShort-channel MosfetsEngineering	1993	160
ASM GaN: Industry Standard Model for GaN RF and Power Devices—Part 1: DC, CV, and RF Model Sourabh Khandelwal, Yogesh Singh Chauhan, Tor A. Fjeldly, IEEE Transactions on Electron Devices Wide-bandgap SemiconductorEngineeringPower ElectronicsAdvance Spice ModelElectromagnetic Compatibility	2018	157
A physics based compact model of I–V and C–V characteristics in AlGaN/GaN HEMT devices Sourabh Khandelwal, Tor A. Fjeldly Solid-State Electronics Wide-bandgap SemiconductorElectrical EngineeringCompact ModelEngineeringPhysics	2012	140
Robust Surface-Potential-Based Compact Model for GaN HEMT IC Design Sourabh Khandelwal, Chandan Yadav, Shantanu Agnihotri, IEEE Transactions on Electron Devices Device ModelingElectrical EngineeringEngineeringGan HemtsNanoelectronics	2013	121
Raman Scattering from Five Phases of Silver Iodide R. C. Hanson, Tor A. Fjeldly, H. D. Hochheimer physica status solidi (b) Materials ScienceRock Salt PhaseMineral PhysicEngineeringPhysics	1975	110

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