Rajan Singh

A novel <scp><i>β</i>‐Ga₂O₃ HEMT</scp> with <scp><i>f</i>_T</scp> of 166 <scp>GHz</scp> and X‐band <scp><i>P</i>_OUT</scp> of 2.91 W/mm

Rajan Singh, Trupti Ranjan Lenka, Ravi Teja Velpula et al. · International Journal of Numerical Modelling Electronic Networks Devices and Fields · 2020 · 36 citations

Engineering, Electrical Engineering, Materials Science +17

Simulation modelling of III-nitride/β-Ga2O3 HEMT for emerging high-power nanoelectronics applications

G. Purnachandra Rao, Trupti Ranjan Lenka, Rajan Singh et al. · Journal of the Korean Physical Society · 2022 · 27 citations

Engineering, Materials Engineering, Materials Science +16

Single and double‐gate based AlGaN/GaN MOS‐HEMTs for the design of low‐noise amplifiers: a comparative study

Deepak Kumar Panda, Rajan Singh, Trupti Ranjan Lenka et al. · IET Circuits Devices & Systems · 2020 · 22 citations · Full text

Engineering, Electrical Engineering, Microelectronics +16

Comparative Study of III-Nitride Nano-HEMTs on Different Substrates for Emerging High-Power Nanoelectronics and Millimetre Wave Applications

G. Purnachandra Rao, Trupti Ranjan Lenka, Rajan Singh et al. · Journal of Electronic Materials · 2022 · 21 citations · Full text

Engineering, Electrical Engineering, Materials Science +16

Simulation modelling of <scp>III‐Nitride</scp> / <i>β</i> ‐Ga ₂ O ₃ Nano‐HEMT for microwave and millimetre wave applications

G. Purnachandra Rao, Rajan Singh, Trupti Ranjan Lenka et al. · International Journal of RF and Microwave Computer-Aided Engineering · 2022 · 19 citations

Engineering, Electrical Engineering, Materials Science +17