IEEE Transactions on Electron Devices · 2022 · 18 citations · 20 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsDevice CharacterizationDevice SimulationField-effect TransistorsMetal-oxide-semiconductor Field-effect TransistorsNanowiresSemiconductor PhysicsField-effect Transistor SimulationGate LeakageGate Oxide LeakageGate-induced Drain LeakageLeakage Current ModelingNanowire TransistorsQuantum Tunneling EffectsSource-drain Leakage
The shape of the channel cross section in rectangular nanowire (NW) gate-all-around (GAA) MOSFETs turns trapezoidal due to process variations. In this article, the impact of process-induced inclination of sidewalls on gate-induced drain leakage (GIDL) current in the trapezoidal channel NW GAA MOSFETs has been systematically investigated using experimental and calibrated TCAD simulation results. The GIDL current has also been analyzed against the variation in other device parameters, such as channel length, height, and width. The lateral band-to-band tunneling (L-BTBT) mechanism at the channel/drain junction has been considered in simulations to obtain the GIDL current. The investigation reveals that the GIDL current increases up to two times if the process-induced sidewalls inclination angle increases from 0° to 20°.
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The impact of gate-induced drain leakage current on MOSFET scaling
Subbreakdown drain leakage current in MOSFET
J. Chen, T.Y. Chan, I.C. Chen et al. · IEEE Electron Device Letters · 1987 · 301 citations