Statistics
Publications
106
Citations
6.2K
H-Index
40
Active since
1981
P.K. Ko is an author at University of California, Berkeley specializing in microelectronics, engineering, and semiconductor devices.
Publications per year
1981–2006
106
106
Threshold voltage model for deep-submicrometer MOSFETs
zhenglin liu, Chenming Hu, Jiawei Huang et al. · IEEE Transactions on Electron Devices · 1993 · 480 citations
Engineering, Electrical Engineering, Electronic Materials +16
The impact of gate-induced drain leakage current on MOSFET scaling
Random telegraph noise of deep-submicrometer MOSFETs
Kuo-Hsiang Hung, P.K. Ko, Chenming Hu et al. · IEEE Electron Device Letters · 1990 · 309 citations
Engineering, Electrical Engineering, Electronic Materials +16
Subbreakdown drain leakage current in MOSFET
J. Chen, T.Y. Chan, I.C. Chen et al. · IEEE Electron Device Letters · 1987 · 301 citations
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