P.K. Ko - Concepedia

Author

P.K. Ko

University of California, Berkeley

Also Known As

P. K. Ko, P. Ko, P.-K. Ko, P.K Ko, P.K. Ko, PING K. KO, Ping K Ko, Ping K. Ko, Ping Keung Ko, Ping Ko

220

Publications

6.5K

Citations

H-Index

Concepts

All Affiliations

University of California, Berkeley Hong Kong University of Science and Technology Semiconductor Manufacturing International (Italy)Hodges University Intel (United States)

About

P.K. Ko is an author at University of California, Berkeley specializing in engineering, microelectronics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	40	101	6K
2	Applied Physics	35	65	4.2K
3	Biomedical Engineering	2	2	176
4	Medicine	1	1	19
5	Social Sciences	1	1	21

P.K. Ko

106

Publications

6.1K

Citations

H-Index

Page 1

	Year	Citations
Threshold voltage model for deep-submicrometer MOSFETs zhenglin liu, Chenming Hu, Jiawei Huang, IEEE Transactions on Electron Devices Low-power ElectronicsDevice ModelingElectrical EngineeringThreshold Voltage ModelEngineering	1993	478
Dynamic threshold-voltage MOSFET (DTMOS) for ultra-low voltage VLSI F. Assaderaghi, D. Sinitsky, S. Parke, IEEE Transactions on Electron Devices Low-power ElectronicsElectrical EngineeringStandard MosfetEngineeringVlsi Design	1997	428
The impact of gate-induced drain leakage current on MOSFET scaling T.Y. Chan, J. Chen, P.K. Ko, Device ModelingElectrical EngineeringEngineeringTechnology ScalingNanoelectronics	1987	344
Random telegraph noise of deep-submicrometer MOSFETs Kuo-Hsiang Hung, P.K. Ko, Chenming Hu, IEEE Electron Device Letters Room TemperatureElectrical EngineeringEngineeringCarrier MobilityElectronic Engineering	1990	308
Subbreakdown drain leakage current in MOSFET J. Chen, T.Y. Chan, I.C. Chen, IEEE Electron Device Letters Semiconductor TechnologyElectrical EngineeringEngineeringStress-induced Leakage CurrentBias Temperature Instability	1987	300
A physical and scalable I-V model in BSIM3v3 for analog/digital circuit simulation Yuhua Cheng, Min-Chie Jeng, Zhihong Liu, IEEE Transactions on Electron Devices EngineeringVlsi DesignAnalog DesignComputer ArchitecturePower Electronics	1997	178
Principles and characteristics of a new generation plasma immersion ion implanter Paul K. Chu, B.Y. Tang, Yaqi Cheng, Review of Scientific Instruments Materials ScienceElectrical EngineeringIon ImplantationEngineeringCorrosion	1997	136
A dynamic threshold voltage MOSFET (DTMOS) for very low voltage operation F. Assaderaghi, S. Parke, D. Sinitsky, IEEE Electron Device Letters Low-power ElectronicsElectrical EngineeringEngineeringVlsi DesignApplied Physics	1994	129
A robust and physical BSIM3 non-quasi-static transient and AC small-signal model for circuit simulation Mansun Chan, Kelvin Y. Hui, Chenming Hu, IEEE Transactions on Electron Devices EngineeringVlsi DesignNumerical Device SimulatorPower ElectronicsElectromagnetic Compatibility	1998	122
Impact ionization in GaAs MESFETs K. Hui, Chenming Hu, P. George, IEEE Electron Device Letters Device ModelingElectrical EngineeringSemiconductor DeviceEngineeringElectronic Engineering	1990	118

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