106
Publications
6.1K
Citations
40
H-Index
1981
Active since
P.K. Ko is an author at University of California, Berkeley specializing in engineering, microelectronics, and electrical engineering.
Top concepts
EngineeringElectrical EngineeringMicroelectronicsApplied PhysicsDevice ModelingNanoelectronicsElectronic EngineeringComputer EngineeringPower ElectronicsElectronic Packaging
Publications per year
1981–2006
106
106
The impact of gate-induced drain leakage current on MOSFET scaling
Random telegraph noise of deep-submicrometer MOSFETs
Kuo-Hsiang Hung, P.K. Ko, Chenming Hu et al. · IEEE Electron Device Letters · 1990 · 308 citations
Subbreakdown drain leakage current in MOSFET
J. Chen, T.Y. Chan, I.C. Chen et al. · IEEE Electron Device Letters · 1987 · 300 citations
Semiconductor Technology, Electrical Engineering, Engineering +9
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1–5 of 106