Random telegraph noise of deep-submicrometer MOSFETs

Abstract

The random telegraph noise exhibited by deep-submicrometer MOSFETs with very small channel area (<or=1 mu m/sup 2/) at room temperature is studied. Analysis of the amplitude of the current fluctuations reveals that the trapped charges generate noise through modulation of the carrier mobility in addition to the carrier number. Parameters needed for modeling the carrier mobility fluctuation effect on the flicker noise in conventional MOSFETs are extracted directly from the random telegraph noise data.<<ETX>>