T.Y. Chan - Concepedia

Concepedia

Author

T.Y. Chan

University of California, Berkeley

Also Known As

T. Chan, T. Y. Chan, T.-Y. Chan, T.Y. Chan, Tim-wah Chan, Ton-Yan Chan

40

Publications

2.3K

Citations

21

H-Index

43

Concepts

All Affiliations

University of California, Berkeley Intel (United States)Semiconductor Manufacturing International (Italy)Hodges University Cypress Semiconductor Corporation (United States)

TC

About

T.Y. Chan is an author at University of California, Berkeley specializing in electrical engineering, microelectronics, and engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	21	29	2.3K
2	Electrical Engineering	21	28	2.2K
3	Applied Physics	20	25	2.2K
4	Computer Engineering	5	5	179
5	Materials Engineering	1	1	17

T.Y. Chan

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29

Publications

2.3K

Citations

21

H-Index

	Year	Citations
Threshold voltage model for deep-submicrometer MOSFETs zhenglin liu, Chenming Hu, Jiawei Huang, IEEE Transactions on Electron Devices Low-power ElectronicsDevice ModelingElectrical EngineeringThreshold Voltage ModelEngineering	1993	478
The impact of gate-induced drain leakage current on MOSFET scaling T.Y. Chan, J. Chen, P.K. Ko, Device ModelingElectrical EngineeringEngineeringTechnology ScalingNanoelectronics	1987	344
Subbreakdown drain leakage current in MOSFET J. Chen, T.Y. Chan, I.C. Chen, IEEE Electron Device Letters Semiconductor TechnologyElectrical EngineeringEngineeringStress-induced Leakage CurrentBias Temperature Instability	1987	300
A simple method to characterize substrate current in MOSFET's T.Y. Chan, P.K. Ko, Chenming Hu IEEE Electron Device Letters Device ModelingSubstrate Current CharacteristicsElectrical EngineeringEngineeringPhysics	1984	192
Dependence of channel electric field on device scaling T.Y. Chan, P.K. Ko, Chenming Hu IEEE Electron Device Letters Device ModelingElectrical EngineeringEngineeringPhysicsTechnology Scaling	1985	140
Deep-submicrometer MOS device fabrication using a photoresist-ashing technique J.E. Chung, M.-C. Jeng, J.E. Moon, IEEE Electron Device Letters Optical MaterialsEngineeringElectron-beam LithographyOptoelectronic DevicesIntegrated Circuits	1988	93
A true single-transistor oxide-nitride-oxide EEPROM device T.Y. Chan, K.K. Young, Chenming Hu IEEE Electron Device Letters Hardware SecurityNon-volatile MemoryElectrical EngineeringEngineeringNanoelectronics	1987	85
A CV technique for measuring thin SOI film thickness J. Chen, R. Solomon, T.Y. Chan, IEEE Electron Device Letters EngineeringCv MeasurementsSilicon On InsulatorSemiconductor DeviceIon Implantation	1991	69
Asymmetrical characteristics in LDD and minimum-overlap MOSFET's T.Y. Chan, A.T. Wu, P.K. Ko, IEEE Electron Device Letters Device ModelingElectrical EngineeringIon ImplantationEngineeringNanoelectronics	1986	56
Threshold voltage and C-V characteristics of SOI MOSFET's related to Si film thickness variation on SIMOX wafers J. Chen, R. Solomon, T.Y. Chan, IEEE Transactions on Electron Devices Electrical EngineeringEngineeringSimox WafersSilicon-film ThicknessBias Temperature Instability	1992	50

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