Concepedia

Source-drain Leakage

Source-Drain Leakage is a short-channel effect in metal-oxide-semiconductor field-effect transistors characterized by an unintended current flow between the source and drain regions due to the narrowing of the channel length, which compromises gate control and allows the channel to remain conductive even under subthreshold gate voltages.

413

Publications

16.5K

Citations

1.9K

Authors

361

Institutions

Publications per year

2017–2026

80

Parents

Publications

413

Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

Masataka Higashiwaki, Kohei Sasaki, Akito Kuramata et al. · Applied Physics Letters · 2012 · 1.8K citations

, , +17

Short-channel effect in fully depleted SOI MOSFETs

K.K. Young · IEEE Transactions on Electron Devices · 1989 · 908 citations

, , +16

AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor

M.A. Khan, X. Hu, G. Sumin et al. · IEEE Electron Device Letters · 2000 · 383 citations

, , +16

Bulk Planar Junctionless Transistor (BPJLT): An Attractive Device Alternative for Scaling

Suresh Gundapaneni, Swaroop Ganguly, Anil Kottantharayil · IEEE Electron Device Letters · 2011 · 245 citations

, , +17

Tri-Gate Normally-Off GaN Power MISFET

Bin Lu, Elison Matioli, Tomás Palacios · IEEE Electron Device Letters · 2012 · 236 citations · Full text

, , +16

1–5 of 413

Authors

1.9K

  1. CH
    Chenming Hu

    University of California, Berkeley, United States

    8 publications · 176 citations

    8

    h-index

  2. MJ
    M. Jagadesh Kumar

    Indian Institute of Technology Delhi, India

    8 publications · 392 citations

    8

    h-index

  3. ES
    Eddy Simoen

    IMEC, Belgium

    7 publications · 131 citations

    7

    h-index

  4. GE
    Geert Eneman

    IMEC, Belgium

    9 publications · 408 citations

    7

    h-index

  5. MS
    M. S. Shur

    Rensselaer Polytechnic Institute, United States

    6 publications · 501 citations

    6

    h-index

1–5 of 1.9K

Institutions

361

  1. IMEC

    Leuven, Belgium

    13 h-index

    130 publications

    4.6K citations

  2. Toshiba (Japan)

    Tokyo, Japan

    11 h-index

    83 publications

    1.9K citations

  3. Purdue University West Lafayette

    West Lafayette, United States

    11 h-index

    30 publications

    1.2K citations

  4. Institut polytechnique de Grenoble

    Grenoble, France

    11 h-index

    48 publications

    1.8K citations

  5. Stanford University

    Stanford, United States

    10 h-index

    35 publications

    2.4K citations

  6. Hong Kong University of Science and Technology

    Hong Kong, Hong Kong

    10 h-index

    31 publications

    1.1K citations

  7. National Yang Ming Chiao Tung University

    Hsinchu, Taiwan

    10 h-index

    32 publications

    644 citations

  8. KU Leuven

    Leuven, Belgium

    10 h-index

    50 publications

    1.8K citations

1–8 of 361

Venues

  1. IEEE Transactions on Electron Devices

    79 publications · 3.8K citations

    33

    h-index

  2. IEEE Electron Device Letters

    55 publications · 2.7K citations

    26

    h-index

  3. Solid-State Electronics

    42 publications · 1K citations

    18

    h-index

  4. Applied Physics Letters

    15 publications · 2.4K citations

    13

    h-index

  5. Microelectronic Engineering

    12 publications · 348 citations

    11

    h-index

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