Tri-Gate Normally-Off GaN Power MISFET

Abstract

We present a new normally-off GaN transistor-the tri-gate normally-off GaN metal-insulator-semiconductor field- effect transistor (MISFET). Due to the excellent channel control of a new 3-D gate structure, a breakdown voltage of 565 V has been achieved at a drain leakage current of 0.6 μA/mm and V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">gs</sub> = 0. The new device has an on/off current ratio of more than eight orders of magnitude and a subthreshold slope of 86 ± 9 mV/decade. The threshold voltage of the new device is 0.80 ± 0.06 V with a maximum drain current of 530 mA/mm. These results confirm the great potential of the tri-gate normally-off GaN-on-Si MISFETs for the next generation of power electronics.