Bin Lu

Tri-Gate Normally-Off GaN Power MISFET

Bin Lu, Elison Matioli, Tomás Palacios · IEEE Electron Device Letters · 2012 · 233 citations · Full text

Electrical Engineering, Electronic Devices, Engineering +11

High Breakdown ($> \hbox{1500\ V}$) AlGaN/GaN HEMTs by Substrate-Transfer Technology

Bin Lu, Tomás Palacios · IEEE Electron Device Letters · 2010 · 201 citations · Full text

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +10

Extraction of Dynamic On-Resistance in GaN Transistors: Under Soft- and Hard-Switching Conditions

Bin Lu, Tomás Palacios, Dilip M. Risbud et al. · 2011 · 121 citations

Dynamic On-resistance, Wide-bandgap Semiconductor, Electrical Engineering +9

High-Performance Integrated Dual-Gate AlGaN/GaN Enhancement-Mode Transistor

Bin Lu, Omair I. Saadat, Tomás Palacios · IEEE Electron Device Letters · 2010 · 96 citations

Wide-bandgap Semiconductor, New Algan/gan Enhancement-mode, Electrical Engineering +9

Synthesis of hydrous ruthenium oxide supported platinum catalysts for direct methanol fuel cells

Zhenguo Chen, Xinping Qiu, Bin Lu et al. · Electrochemistry Communications · 2005 · 83 citations · Full text

Materials Science, Chemical Engineering, Catalytic Material +7