High Breakdown ($> \hbox{1500\ V}$) AlGaN/GaN HEMTs by Substrate-Transfer Technology

Abstract

In this letter, we present a new technology to increase the breakdown voltage of AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on Si substrates. This new technology is based on the removal of the original Si substrate and subsequent transfer of the AlGaN/GaN HEMT structure to an insulating carrier wafer (e.g., glass or polycrystalline AlN). By applying this new technology to standard AlGaN/GaN HEMTs grown on Si substrate, an AlGaN/GaN HEMT with breakdown voltage above 1500 V and specific on resistance of 5.3 mΩ·cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> has been achieved.