K.K. Young

Short-channel effect in fully depleted SOI MOSFETs

K.K. Young · IEEE Transactions on Electron Devices · 1989 · 903 citations

Device Modeling, Semiconductor Technology, Electrical Engineering +9

Substrate hole current and oxide breakdown

I. C. Chen, S. Holland, K.K. Young et al. · Applied Physics Letters · 1986 · 202 citations

Hole Fluence, Electrical Engineering, Hot-hole Tunneling +11

Analysis of conduction in fully depleted SOI MOSFETs

K.K. Young · IEEE Transactions on Electron Devices · 1989 · 150 citations

Device Modeling, Semiconductors, Electrical Engineering +11

An experimentally validated analytical model for gate line-edge roughness (LER) effects on technology scaling

C.H. Diaz, Hun-Jan Tao, Yao-Ching Ku et al. · IEEE Electron Device Letters · 2001 · 148 citations

Device Modeling, Electrical Engineering, Gate Length +15

Avalanche-induced drain-source breakdown in silicon-on-insulator n-MOSFETs

K.K. Young, J.A. Burns · IEEE Transactions on Electron Devices · 1988 · 101 citations

Device Modeling, Electrical Engineering, Avalanche-induced Drain-source Breakdown +12