H.C. Wann

Design for suppression of gate-induced drain leakage in LDD MOSFETs using a quasi-two-dimensional analytical model

S. Parke, J.E. Moon, H.C. Wann et al. · IEEE Transactions on Electron Devices · 1992 · 111 citations

Device Modeling, Semiconductor Technology, Electrical Engineering +12

MOSFET carrier mobility model based on gate oxide thickness, threshold and gate voltages

Kai Chen, H.C. Wann, Jon Dunster et al. · Solid-State Electronics · 1996 · 110 citations

Device Modeling, Gate Voltages, Electrical Engineering +7

The impact of device scaling and power supply change on CMOS gate performance

Kai Chen, H.C. Wann, P.K. Ko et al. · IEEE Electron Device Letters · 1996 · 69 citations

Low-power Electronics, Electrical Engineering, Engineering +15

High-endurance ultra-thin tunnel oxide in MONOS device structure for dynamic memory application

H.C. Wann, Chenming Hu · IEEE Electron Device Letters · 1995 · 49 citations

Non-volatile Memory, Engineering, Emerging Memory Technology +18

An accurate semi-empirical saturation drain current model for LDD n-MOSFET

Kai Chen, H.C. Wann, J.S. Duster et al. · IEEE Electron Device Letters · 1996 · 38 citations

Device Modeling, Electrical Engineering, Semiconductor Device +10