J.S. Duster - Concepedia

Author

J.S. Duster

Cornell University

Also Known As

J. Duster, J. S. Duster, J.S. Duster, Jon Duster, Jon S. Duster

Publications

526

Citations

H-Index

Concepts

All Affiliations

Cornell University Intel (United States)University of California, Berkeley

About

J.S. Duster is an author at Cornell University specializing in engineering, microelectronics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	12	15	434
2	Electrical Engineering	11	12	391
3	Applied Physics	6	6	249
4	Computer Engineering	6	6	115
5	Biomedical Engineering	1	1	60

J.S. Duster

Publications

473

Citations

H-Index

Page 1

	Year	Citations
A MOSFET electron mobility model of wide temperature range (77 - 400 K) for IC simulation Kenneth Chain, Jian-hui Huang, J.S. Duster, Semiconductor Science and Technology EngineeringIc SimulationWide Temperature RangeSemiconductor DeviceNanoelectronics	1997	73
Improved independent gate N-type FinFET fabrication and characterization David Fried, J.S. Duster, Kevin Kornegay IEEE Electron Device Letters Electrical EngineeringEngineeringMicrofabricationNanoelectronicsElectronic Engineering	2003	60
Analysis and design of negative impedance LC oscillators using bipolar transistors J.-H.C. Zhan, K. Maurice, J.S. Duster, IEEE Transactions on Circuits and Systems I Fundamental Theory and Applications Electrical EngineeringEngineeringNonlinear CircuitHigh-frequency DeviceEmitter Degeneration	2003	45
High-Performance P-Type Independent-Gate FinFETs David Fried, J.S. Duster, Kevin Kornegay IEEE Electron Device Letters Device ModelingP-type FinfetElectrical EngineeringIndependent GatesEngineering	2004	44
A 25-GHz emitter degenerated LC VCO Jing-Hong Conan Zhan, J.S. Duster, Kevin Kornegay IEEE Journal of Solid-State Circuits Radio FrequencyHigh-frequency DeviceMixed-signal Integrated CircuitPhase NoiseSige 6	2004	39
An accurate semi-empirical saturation drain current model for LDD n-MOSFET Kai Chen, H.C. Wann, J.S. Duster, IEEE Electron Device Letters Device ModelingElectrical EngineeringSemiconductor DeviceEngineeringVelocity Saturation	1996	38
Temperature dependence of MOSFET substrate current Jiawei Huang, G.B. Zhang, Z.H. Liu, IEEE Electron Device Letters Device ModelingElectrical EngineeringEnergy RelaxationEngineeringElectronic Engineering	1993	31
A Fin-type independent-double-gate NFET David Fried, E. Nowak, J. Kedzierski, Device ModelingElectrical EngineeringIndependent GatesEngineeringVlsi Design	2004	30
A 32 nm SoC With Dual Core ATOM Processor and RF WiFi Transceiver Hasnain Lakdawala, Mark Schaecher, Chang-Tsung Fu, IEEE Journal of Solid-State Circuits Low-power ElectronicsSystem On ChipElectrical EngineeringNm SocEngineering	2012	23
A 2.4GHz WLAN transceiver with fully-integrated highly-linear 1.8V 28.4dBm PA, 34dBm T/R switch, 240MS/s DAC, 320MS/s ADC, and DPLL in 32nm SoC CMOS Yulin Tan, J.S. Duster, C-T. Fu, Low-power ElectronicsFractional LogEngineeringAnalog-to-digital ConverterWlan Transceiver	2012	17

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