A MOSFET electron mobility model of wide temperature range (77 - 400 K) for IC simulation

Abstract

Based on the physics of scattering mechanisms of MOSFET inversion layer carriers at different temperatures and vertical electric fields, a new unified mobility model of wide temperature (77 - 400 K) and range is proposed for IC simulation. Measurement data taken in a wide range of temperatures and electric fields are compared with the simulation results of a MOSFET current model implementing this new mobility equation. Excellent agreement between the simulation and measurement data is found.