IEEE Electron Device Letters · 1996 · 38 citations · 0 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesTransport PhenomenaCarrier TransportDevice CharacterizationDevice ModelingDevice ScalingMetal-oxide-semiconductor Field-effect TransistorsShort-channel EffectsCarrier Mobility ModelingMeasurementMetal-oxide-semiconductor Field-effect Transistor ModelingMosfet ModelingSaturationSaturation CurrentSeries ResistanceVelocity Saturation
Based on a new empirical mobility model which is solely dependent on V/sub gs/, V/sub t/ and T/sub ox/, a corresponding semiempirical I/sub dsat/ model for n-MOSFET including velocity saturation, mobility degradation due to increased vertical effective field, and source/drain series resistance of LDD structures is reported in this paper. A good agreement among the model and the measurement data from several different technologies is shown. Prediction of I/sub dsat/ for the future generations of device scaling and low-power applications by using this new model is presented.