MOSFET carrier mobility model based on gate oxide thickness, threshold and gate voltages - Concepedia

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MOSFET carrier mobility model based on gate oxide thickness, threshold and gate voltages

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Citations

2

References

1996

Year

Kai Chen, H.C. Wann, Jon Dunster, P.K. Ko, Chenming Hu, Makoto Yoshida

Solid-State Electronics

Device ModelingGate VoltagesElectrical EngineeringEngineeringElectronic EngineeringBias Temperature InstabilityApplied PhysicsGate Oxide ThicknessMicroelectronicsSemiconductor Device

References

	Year	Citations

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