Concepedia

MOSFET carrier mobility model based on gate oxide thickness, threshold and gate voltages

Kai Chen, H.C. Wann, Jon Dunster, P.K. Ko, Chenming Hu, Makoto Yoshida

Solid-State Electronics · 1996 · 112 citations · 2 references

Concepts

EngineeringComputer EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesThin FilmsCarrier TransportCharge Carrier TransportDevice CharacterizationDevice ModelingElectronic Transport ModelingMetal-oxide-semiconductor Field-effect TransistorsCarrier MobilityCarrier Mobility ModelingCarrier Transport ModelingGate Oxide Thickness EffectsMetal-oxide-semiconductor Field-effect Transistor ModelingMosfet ModelingThreshold Voltage Modeling

References

2

On the universality of inversion layer mobility in Si MOSFET's: Part I-effects of substrate impurity concentration

S. Takagi, Akira Toriumi, M. Iwase et al. · IEEE Transactions on Electron Devices · 1994 · 1.5K citations

Engineering, Electrical Engineering, Materials Science +17

Inversion-layer capacitance and mobility of very thin gate-Oxide MOSFET's

Mong-Song Liang, Jeong Yeol Choi, Ping-Keung Ko et al. · IEEE Transactions on Electron Devices · 1986 · 151 citations

Engineering, Electrical Engineering, Materials Science +17