J.E. Moon

Design for suppression of gate-induced drain leakage in LDD MOSFETs using a quasi-two-dimensional analytical model

S. Parke, J.E. Moon, H.C. Wann et al. · IEEE Transactions on Electron Devices · 1992 · 111 citations

Device Modeling, Semiconductor Technology, Electrical Engineering +12

Low-voltage hot-electron currents and degradation in deep-submicrometer MOSFETs

J.E. Chung, M.-C. Jeng, J.E. Moon et al. · IEEE Transactions on Electron Devices · 1990 · 103 citations

Semiconductor Technology, Electrical Engineering, Drain Biases +9

Deep-submicrometer MOS device fabrication using a photoresist-ashing technique

J.E. Chung, M.-C. Jeng, J.E. Moon et al. · IEEE Electron Device Letters · 1988 · 93 citations

Optical Materials, Engineering, Electron-beam Lithography +18

Performance and reliability design issues for deep-submicrometer MOSFETs

J.E. Chung, M.-C. Jeng, J.E. Moon et al. · IEEE Transactions on Electron Devices · 1991 · 65 citations

Low-power Electronics, Electrical Engineering, Engineering +15

A new LDD structure: total overlap with polysilicon spacer (TOPS)

J.E. Moon, T. Garfinkel, J.E. Chung et al. · IEEE Electron Device Letters · 1990 · 16 citations

Electrical Engineering, Engineering, Advanced Packaging (Semiconductors) +10