Japanese Journal of Applied Physics · 2020 · 42 citations · 21 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsDevice CharacterizationDevice ReliabilitySemiconductor ReliabilitySemiconductor SurfacesSurface RoughnessSurface Roughness EffectsGate Oxide DegradationGate Oxide ReliabilityRoughnessRoughness ParametersSemiconductor Device CharacterizationSurface Roughness ParametersThin Film Surface Roughness
Abstract The surface roughness of silicon wafer is one of the most important issues that degrade characteristics of semiconductor devices. The importance of spatial roughness frequency as an influential parameter has been pointed. In this research, the effect of roughness frequency on MOSFET characteristics was studied using samples with different roughness for frequency. From the obtained results, it was found that roughness with a low spatial wavelength affects electron mobility and gate insulating film reliability such as E bd , Q bd and SILC.
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Shinichi Takagi, Judy L. Hoyt, J.J. Welser et al. · Journal of Applied Physics · 1996 · 470 citations
Dependence of thin-oxide films quality on surface microroughness
T. Ohmi, M. Miyashita, M. Itano et al. · IEEE Transactions on Electron Devices · 1992 · 303 citations · Full text
Natural Sciences, Materials Engineering, Materials Science +17
Christian Teichert, J. F. G. Mackay, D. E. Savage et al. · Applied Physics Letters · 1995 · 92 citations
Natural Sciences, Materials Engineering, Materials Science +17