Tomoyuki Suwa

Atomically Flat Silicon Surface and Silicon/Insulator Interface Formation Technologies for (100) Surface Orientation Large-Diameter Wafers Introducing High Performance and Low-Noise Metal–Insulator–Silicon FETs

Rihito Kuroda, Tomoyuki Suwa, Akinobu Teramoto et al. · IEEE Transactions on Electron Devices · 2009 · 67 citations

Engineering, Silicon On Insulator, Semiconductor Device +18

Influence of silicon wafer surface roughness on semiconductor device characteristics

Keiichiro Mori, Shuichi Samata, Noritomo Mitsugi et al. · Japanese Journal of Applied Physics · 2020 · 41 citations · Full text

Electrical Engineering, Semiconductor Device, Engineering +15

Complementary Metal–Oxide–Silicon Field-Effect-Transistors Featuring Atomically Flat Gate Insulator Film/Silicon Interface

Rihito Kuroda, Akinobu Teramoto, Yukihisa Nakao et al. · Japanese Journal of Applied Physics · 2009 · 30 citations

Semiconductor Technology, Electrical Engineering, Engineering +14

Atomically Flattening Technology at 850ºC for Si(100) Surface

Xiang Li, Tomoyuki Suwa, Akinobu Teramoto et al. · ECS Transactions · 2010 · 28 citations

Materials Science, Wafer Scale Processing, Engineering +12

Large-Scale Test Circuits for High-Speed and Highly Accurate Evaluation of Variability and Noise in Metal–Oxide–Semiconductor Field-Effect Transistor Electrical Characteristics

Yuki Kumagai, Kenichi Abe, Takafumi Fujisawa et al. · Japanese Journal of Applied Physics · 2011 · 22 citations

Device Modeling, Electrical Engineering, Semiconductor Device +12