Akinobu Teramoto

Dependence of electron channel mobility on Si-SiO/sub 2/ interface microroughness

T. Ohmi, Kazuhiko Kotani, Akinobu Teramoto et al. · IEEE Electron Device Letters · 1991 · 169 citations

Semiconductor Technology, Electrical Engineering, Engineering +13

Harmonic current and reactive power compensation with an active filter

Masatoshi Takeda, Kenji Ikeda, Akinobu Teramoto et al. · 2003 · 138 citations

Flow Control, Engineering, Power Electronics +16

High Permeability and Low Loss Ni–Fe Composite Material for High-Frequency Applications

Y. Shirakata, Nobuhiro Hidaka, M. Ishitsuka et al. · IEEE Transactions on Magnetics · 2008 · 110 citations

Magnetic Properties, Engineering, Mechanical Engineering +23

New era of silicon technologies due to radical reaction based semiconductor manufacturing

Tadahiro Ohmi, Masaki Hirayama, Akinobu Teramoto · Journal of Physics D Applied Physics · 2005 · 93 citations

Silicon Technologies, Engineering, Education +22

Very High Carrier Mobility for High-Performance CMOS on a Si(110) Surface

Akinobu Teramoto, T. Hamada, Masashi Yamamoto et al. · IEEE Transactions on Electron Devices · 2007 · 77 citations

Radical Oxidation, Electrical Engineering, High-performance Cmos +14