Masaki Hirayama

Highly reliable ultrathin silicon oxide film formation at low temperature by oxygen radical generated in high-density krypton plasma

Ken‐Taro Sekine, Yuji Saito, Masaki Hirayama et al. · IEEE Transactions on Electron Devices · 2001 · 96 citations

Natural Sciences, Materials Science, Physics +17

New era of silicon technologies due to radical reaction based semiconductor manufacturing

Tadahiro Ohmi, Masaki Hirayama, Akinobu Teramoto · Journal of Physics D Applied Physics · 2005 · 94 citations

Engineering, Electrical Engineering, Manufacturing Engineering +16

Very High Carrier Mobility for High-Performance CMOS on a Si(110) Surface

Akinobu Teramoto, T. Hamada, Masashi Yamamoto et al. · IEEE Transactions on Electron Devices · 2007 · 79 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Impact of Improved High-Performance Si(110)-Oriented Metal–Oxide–Semiconductor Field-Effect Transistors Using Accumulation-Mode Fully Depleted Silicon-on-Insulator Devices

Weitao Cheng, Akinobu Teramoto, Masaki Hirayama et al. · Japanese Journal of Applied Physics · 2006 · 49 citations

Engineering, Electrical Engineering, Materials Science +15

Highly robust ultrathin silicon nitride films grown at low-temperature by microwave-excitation high-density plasma for giga scale integration

Ken‐Taro Sekine, Yuji Saito, Masaki Hirayama et al. · IEEE Transactions on Electron Devices · 2000 · 47 citations · Full text

Engineering, Electrical Engineering, Materials Science +17