IEEE Transactions on Electron Devices · 2001 · 96 citations · 9 references
EngineeringSilicon On InsulatorPlasma ProcessingLow TemperatureHigh Dielectric StrengthNanoelectronicsFilm FormationNonthermal PlasmaMaterials ScienceElectrical EngineeringOxide ElectronicsMicroelectronicsHigh Growth RateSurface ScienceApplied PhysicsHigh-density Krypton PlasmaGrown Silicon OxideGas Discharge PlasmaPlasma ApplicationElectrical Insulation
This paper focuses attention on electrical properties of silicon oxide films grown by oxygen radical generated in Kr/O/sub 2/ mixed high-density microwave-excited plasma at 400/spl deg/C. They represent high growth rate, low activation energy, high dielectric strength, high charge-to-breakdown, and low interface trap density and bulk charge enough to replace thermally grown silicon oxide.
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