Katsuyuki Sekine

Silicon nitride film growth for advanced gate dielectric at low temperature employing high-density and low-energy ion bombardment

Katsuyuki Sekine, Yuji Saito, Masaki Hirayama et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1999 · 41 citations

Materials Science, Electrical Engineering, Ion Implantation +14

Low-Temperature Formation of Silicon Nitride Film by Direct Nitridation Employing High-Density and Low-Energy Ion Bombardment

Yuji Saito, Katsuyuki Sekine, Masaki Hirayama et al. · Japanese Journal of Applied Physics · 1999 · 28 citations

Engineering, Silicon Nitride Film, Silicon On Insulator +18

Effects of Nitrogen Concentration and Post-treatment on Reliability of HfSiON Gate Dielectrics in Inversion States

Motoyuki Sato, Tomonori Aoyama, Katsuyuki Sekine et al. · Japanese Journal of Applied Physics · 2006 · 14 citations

Nitrogen Concentration, Silc Behavior, Electrical Engineering +15

Impact of metal gate electrode on Weibull distribution of TDDB in HfSiON gate dielectrics

Izumi Hirano, Yasushi Nakasaki, Shigeto Fukatsu et al. · 2009 · 13 citations

Wide-bandgap Semiconductor, Engineering, Dc Stress +18

Time-dependent dielectric breakdown (TDDB) distribution in n-MOSFET with HfSiON gate dielectrics under DC and AC stressing

Izumi Hirano, Yasushi Nakasaki, Shigeto Fukatsu et al. · Microelectronics Reliability · 2013 · 12 citations

Electrical Engineering, Engineering, Stress-induced Leakage Current +7