Concepedia

Time-dependent dielectric breakdown (TDDB) distribution in n-MOSFET with HfSiON gate dielectrics under DC and AC stressing

Izumi Hirano, Yasushi Nakasaki, Shigeto Fukatsu, Masakazu Goto, Koji Nagatomo, Seiji Inumiya, Katsuyuki Sekine, Yuichiro Mitani, Kikuo Yamabe

Microelectronics Reliability · 2013 · 14 citations · 22 references

Concepts

EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsDevice CharacterizationDevice ReliabilityDevice SimulationDielectricsSemiconductor ReliabilityShort-channel EffectsBreakdown MechanismsBreakdown VoltageDielectric BreakdownElectrical BreakdownElectrical Breakdown StrengthGate DielectricsTime-dependent Dielectric Breakdown

References

22

High-κ gate dielectrics: Current status and materials properties considerations

G. D. Wilk, Robert M. Wallace, J. Anthony · Journal of Applied Physics · 2001 · 5.9K citations

Engineering, Materials Engineering, Materials Science +17

Mechanism for stress-induced leakage currents in thin silicon dioxide films

D. J. DiMaria, E. Cartier · Journal of Applied Physics · 1995 · 547 citations

Natural Sciences, Materials Science, Physics +16

Hole injection SiO/sub 2/ breakdown model for very low voltage lifetime extrapolation

K.F. Schuegraf, Chenming Hu · IEEE Transactions on Electron Devices · 1994 · 540 citations

Engineering, Electrical Engineering, Materials Science +17

Percolation models for gate oxide breakdown

J. H. Stathis · Journal of Applied Physics · 1999 · 528 citations

Natural Sciences, Electrical Engineering, Materials Science +17

Thermochemical description of dielectric breakdown in high dielectric constant materials

J. W. McPherson, Jin-Pyo Kim, A. Shanware et al. · Applied Physics Letters · 2003 · 391 citations

Natural Sciences, Materials Science, Physics +17