Time-dependent dielectric breakdown (TDDB) distribution in n-MOSFET with HfSiON gate dielectrics under DC and AC stressing - Concepedia

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Time-dependent dielectric breakdown (TDDB) distribution in n-MOSFET with HfSiON gate dielectrics under DC and AC stressing

12

Citations

22

References

2013

Year

Izumi Hirano, Yasushi Nakasaki, Shigeto Fukatsu, Masakazu Goto, Koji Nagatomo, Seiji Inumiya, Katsuyuki Sekine, Yuichiro Mitani, Kikuo Yamabe

Microelectronics Reliability

Electrical EngineeringEngineeringStress-induced Leakage CurrentBias Temperature InstabilityTime-dependent Dielectric BreakdownDevice ReliabilityMicroelectronicsHfsion Gate DielectricsAc StressingElectrical Insulation

References

	Year	Citations

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